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IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET

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IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET

Model Number : IXFN38N100Q2

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 6000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 1000 V 38A (Tc) 890W (Tc) Chassis Mount SOT-227B

VDSS : 1000 V

VDGR : 1000 V

VGS : ±30 V

VGSM : ±40 V

PD : 890 W

Weight : 30 g

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IXFN38N100Q2

HiPerFETTM Power MOSFET

N-Channel Enhancement Mode Avalanche Rated, Low Qg , Low Intrinsic Rg High dV/dt, Low trr

VDSS = 1000 V

ID25 = 38 A

RDS(on)= 0.25 Ω

trr ≤ 300 ns

Features

• Double metal process for low gate resistance

• miniBLOC, with Aluminium nitride isolation

• Unclamped Inductive Switching (UIS) rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Switched-mode and resonant-mode power supplies

• DC choppers

• Pulse generators

Advantages

• Easy to mount

• Space savings

• High power density

Maximum Ratings

Symbol Test Conditions MAX. UNIT
VDSS TJ = 25°C to 150°C 1000 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC = 25°C 38 A
IDM TC = 25°C, pulse width limited by TJM 152 A
IAR TC = 25°C 38 A
EAR TC = 25°C 60 mJ
EAS TC = 25°C 5.0 J
dv/dt

IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

TJ ≤ 150°C, RG = 2 Ω

 20 V/ns
PD TC = 25°C 890 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS, t = 1 minute 2500 V
Md

Mounting torque

Terminal connection torque

1.5/13

1.5/13

Nm/lb.in.

Nm/lb.in.

Stock Offer (Hot Sell)

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Product Tags:

thyristor diode module

      

low voltage power mosfet

      
Wholesale IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET from china suppliers

IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET Images

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